Description
The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications.
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Contributors
- Sanchez Esqueda, Ivan (Author)
- Barnaby, Hugh J (Committee member)
- Schroder, Dieter (Thesis advisor)
- Schroder, Dieter K. (Committee member)
- Holbert, Keith E. (Committee member)
- Gildenblat, Gennady (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2011
Subjects
- Electrical Engineering
- Physics
- CMOS
- Dose
- Microelectronics
- Radiation
- Semiconductor
- Transistors
- Metal oxide semiconductors, Complementary--Effect of radiation on--Mathematical models.
- Metal oxide semiconductors, Complementary
- Ionizing radiation--Dosage--Mathematical models.
- Ionizing Radiation
- Integrated circuits--Effect of radiation on--Mathematical models.
- Integrated circuits
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Note
- Partial requirement for: Ph.D., Arizona State University, 2011Note typethesis
- Includes bibliographical references (p
- Field of study: Electrical engineering
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Statement of Responsibility
by Ivan Sanchez Esqueda