Description
Wide bandgap (WBG) semiconductors GaN (3.4 eV), Ga2O3 (4.8 eV) and AlN (6.2 eV), have gained considerable interests for energy-efficient optoelectronic and electronic applications in solid-state lighting, photovoltaics, power conversion, and so on. They can offer unique device performance compared with traditional semiconductors such as Si.
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Contributors
- Fu, Houqiang (Author)
- Zhao, Yuji (Thesis advisor)
- Vasileska, Dragica (Committee member)
- Goodnick, Stephen (Committee member)
- Yu, Hongbin (Committee member)
- Wang, Liping (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2019
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- Doctoral Dissertation Electrical Engineering 2019