Description

Semiconductor nanowires have the potential to emerge as the building blocks of next generation field-effect transistors, logic gates, solar cells and light emitting diodes. Use of Gallium Nitride (GaN) and

Semiconductor nanowires have the potential to emerge as the building blocks of next generation field-effect transistors, logic gates, solar cells and light emitting diodes. Use of Gallium Nitride (GaN) and other wide bandgap materials combines the advantages of III-nitrides along with the enhanced mobility offered by 2-dimensional confinement present in nanowires. The focus of this thesis is on developing a low field mobility model for a GaN nanowire using Ensemble Monte Carlo (EMC) techniques.

Reuse Permissions
  • 2.45 MB application/pdf

    Download count: 0

    Details

    Contributors
    Date Created
    • 2017
    Resource Type
  • Text
  • Collections this item is in
    Note
    • Masters Thesis Electrical Engineering 2017

    Machine-readable links