Description

The larger tolerance to lattice mismatch in growth of semiconductor nanowires (NWs) offers much more flexibility for achieving a wide range of compositions and bandgaps via alloying within a single

The larger tolerance to lattice mismatch in growth of semiconductor nanowires (NWs) offers much more flexibility for achieving a wide range of compositions and bandgaps via alloying within a single substrate. The bandgap of III-V InGaAsP alloy NWs can be tuned to cover a wide range of (0.4, 2.25) eV, appealing for various optoelectronic applications such as photodetectors, solar cells, Light Emitting Diodes (LEDs), lasers, etc., given the existing rich knowledge in device fabrication based on these materials.

Reuse Permissions
  • 10.84 MB application/pdf

    Download count: 0

    Details

    Contributors
    Date Created
    • 2018
    Resource Type
  • Text
  • Collections this item is in
    Note
    • Partial requirement for: Ph.D., Arizona State University, 2018
      Note type
      thesis
    • Includes bibliographical references (pages 192-211)
      Note type
      bibliography
    • Field of study: Chemistry

    Citation and reuse

    Statement of Responsibility

    by Seyed Ebrahim Hashemi Amiri

    Machine-readable links