Description
GaN and AlGaN have shown great potential in next-generation power and RF electronics. However, these devices are limited by reliability issues such as leakage current and current collapse that result from surface and interface states on GaN and AlGaN. This dissertation, therefore, examined these electronic states, focusing on the following two points:
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Contributors
- Eller, Brianna (Author)
- Nemanich, Robert J (Thesis advisor)
- Chowdhury, Srabanti (Committee member)
- McCartney, Martha (Committee member)
- Ponce, Fernando (Committee member)
- Smith, David (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2015
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Note
- Partial requirement for: Ph.D., Arizona State University, 2015Note typethesis
- Includes bibliographical referencesNote typebibliography
- Field of study: Physics
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by Brianna Eller