There is an ever growing need for larger memories which are reliable and fast. New technologies to implement non-volatile memories which are large, fast, compact and cost-efficient are being studied extensively. One of the most promising technologies being developed is the resistive RAM (ReRAM). In ReRAM the resistance of the device varies with the voltage applied across it. Programmable metallization cells (PMC) is one of the devices belonging to this category of non-volatile memories.
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- Partial requirement for: M.S., Arizona State University, 2014Note typethesis
- Includes bibliographical references (p. 51-52)Note typebibliography
- Field of study: Electrical engineering