Description
Nitride semiconductors have wide applications in electronics and optoelectronics technologies. Understanding the nature of the optical recombination process and its effects on luminescence efficiency is important for the development of novel devices. This dissertation deals with the optical properties of nitride semiconductors, including GaN epitaxial layers and more complex heterostructures.
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Contributors
- Li, Di (Author)
- Ponce, Fernando (Thesis advisor)
- Culbertson, Robert (Committee member)
- Yu, Hongbin (Committee member)
- Shumway, John (Committee member)
- Menéndez, Jose (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2012
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Note
- Partial requirement for: Ph.D., Arizona State University, 2012Note typethesis
- Includes bibliographical referencesNote typebibliography
- Field of study: Physics
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by Ti Li