We have also made the attempts of using zinc nitride and copper nitride as metal sources to synthesize the boronic acid-containing MOFs. However, the attempts were not successful. The possible reason is the existence of copper and zinc ions catalyzed the decomposition of 3,5-Dicarboxyphenylboronic acid, forming isophthalic acid. The ended product has been proved to be isophthalic acid crystals by the single crystal X-ray diffraction. The effects of solvents, reaction temperature, and added bases were investigated. The addition of triethylamine has been shown to tremendously improve the sample crystallinity by facilitating ligand deprotonation
The first part of this work is focused on the evolution of microstructures of BAlN thin films. The films were grown by flow-modulated epitaxy at 1010 oC, with B/(B+Al) gas-flow ratios ranging from 0.06 to 0.18. The boron content obtained from X-ray diffraction (XRD) patterns ranges from x = 0.02 to 0.09, while Rutherford backscattering spectrometry (RBS) measures x = 0.06 to 0.16. Transmission electron microscopy indicates the sole presence of the wurtzite crystal structure in the BAlN films, and a tendency towards twin formation and finer microstructure for B/(B+Al) gas-flow ratios greater than 0.15. The RBS data suggest that the incorporation of B is highly efficient, while the XRD data indicate that the epitaxial growth may be limited by a solubility limit in the crystal phase at about 9%. Electron energy loss spectroscopy has been used to profile spatial variations in the composition of the films. It has also located point defects in the films with nanometer resolution. The defects are identified as B and Al interstitials and N vacancies by comparison of the observed energy thresholds with results of density functional theory calculations.
The second part of this work investigates dislocation clusters observed in thick InxGa1-xN films with 0.07 ≤ x ≤ 0.12. The clusters resemble baskets with a higher indium content at their interior. Threading dislocations at the basket boundaries are of the misfit edge type, and their separation is consistent with misfit strain relaxation due the difference in indium content between the baskets and the surrounding matrix. The base of the baskets exhibits no observable misfit dislocations connected to the threading dislocations, and often no net displacements like those due to stacking faults. It is argued that the origin of these threading dislocation arrays is associated with misfit dislocations at the basal plane that dissociate, forming stacking faults. When the stacking faults form simultaneously satisfying the crystal symmetry, the sum of their translation vectors does add up to zero, consistent with our experimental observations.
III-antimonide semiconductors, particularly aluminum (indium) gallium antimonide alloys, with relatively low bandgaps, are promising candidates for the absorption of long wavelength photons and thermophotovoltaic applications. GaSb and its alloys can be grown metamorphically on non-native substrates such as GaAs allowing for the understanding of different multijunction solar cell designs. The work in this dissertation presents the molecular beam epitaxy growth, crystal quality, and device performance of AlxGa1−xSb solar cells grown on GaAs substrates. The motivation is on the optimization of the growth of AlxGa1−xSb on GaAs (001) substrates to decrease the threading dislocation density resulting from the significant lattice mismatch between GaSb and GaAs. GaSb, Al0.15Ga0.85Sb, and Al0.5Ga0.5Sb cells grown on GaAs substrates demonstrate open-circuit voltages of 0.16, 0.17, and 0.35 V, respectively. In addition, a detailed study is presented to demonstrate the temperature dependence of (Al)GaSb PV cells.
III-nitride semiconductors are promising candidates for high-efficiency solar cells due to their inherent properties and pre-existing infrastructures that can be used as a leverage to improve future nitride-based solar cells. However, to unleash the full potential of III-nitride alloys for PV and PV-thermal (PVT) applications, significant progress in growth, design, and device fabrication are required. In this dissertation, first, the performance of
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InGaN solar cells designed for high temperature application (such as PVT) are presented showing robust cell performance up to 600 ⁰C with no significant degradation.
In the final section, extremely low-resistance GaN-based tunnel junctions with different structures are demonstrated showing highly efficient tunneling characteristics with negative differential resistance (NDR). To improve the efficiency of optoelectronic devices such as UV emitters the first AlGaN tunnel diode with Zener characteristic is presented. Finally, enabled by GaN tunnel junction, the first tunnel contacted InGaN solar cell with a high VOC value of 2.22 V is demonstrated.
Synthesis of Metal Ternary and Quaternary Nitrides with Applications in Renewable Ammonia Production
Ammonia is one of the most important chemicals for modern civilization as well as a potentially invaluable intermediary component of a future sustainable H2 economy, yet its current production is decidedly unsustainable. Accordingly, researchers are attempting to devise new paradigms for ammonia production, one of which would involve the cyclical reaction of H2 with a nitride compound and the renitridation of that compound with N2 - a thermochemical loop that would allow for ammonia production with renewable inputs and at relatively low pressures. In this paper, researchers identified several ternary and quaternary metal nitrides with the potential to exhibit relatively favorable thermodynamics for both the reduction and nitridation steps of that reaction cycle. These compounds were synthesized via co-precipitation and Pechini synthesis and several were tested under gas flows of 75% H2/Ar at 100-700 C and 75% H2/N2 at 700 C to determine their behavior under these conditions. As suggested by the available literature, Co3Mo3N was found to be a far better candidate for thermochemical looping than Fe3Mo3N or Ni2Mo3N - with higher mass loss and mass regain. Interestingly, quaternary nitrides containing Fe and Co in addition to Mo also demonstrated remarkable reduction and nitridation capability under ambient pressures. Ultimately, this paper demonstrates the feasibility of synthesizing a variety of single phase ternary and quaternary nitrides and the potential that several of these nitrides hold for producing ammonia sustainably via cyclic thermochemistry.