Description
Ge1-ySny alloys represent a new class of photonic materials for integrated optoelectronics on Si. In this work, the electrical and optical properties of Ge1-ySny alloy films grown on Si, with concentrations in the range 0 ≤ y ≤ 0.04, are studied via a variety of methods.
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Contributors
- Mathews, Jay (Author)
- Menéndez, Jose (Thesis advisor)
- Kouvetakis, John (Thesis advisor)
- Drucker, Jeffery (Committee member)
- Chizmeshya, Andrew (Committee member)
- Ponce, Fernando (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2011
Subjects
- Physics
- Materials Science
- Electrical Engineering
- Detectors
- Germanium
- Lasers
- Luminescence
- Optoelectronics
- Photonics
- Germanium alloys--Electric properties.
- Germanium alloys
- Germanium alloys--Optical properties.
- Germanium alloys
- Tin alloys--Electric properties.
- Tin alloys
- Tin alloys--Optical properties.
- Tin alloys
Resource Type
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Note
- Partial requirement for: Ph.D., Arizona State University, 2011Note typethesis
- Includes bibliographical references (p. 145-153)Note typebibliography
- Field of study: Physics
Citation and reuse
Statement of Responsibility
by Jay Mathews