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Ge1-ySny alloys represent a new class of photonic materials for integrated optoelectronics on Si. In this work, the electrical and optical properties of Ge1-ySny alloy films grown on Si, with

Ge1-ySny alloys represent a new class of photonic materials for integrated optoelectronics on Si. In this work, the electrical and optical properties of Ge1-ySny alloy films grown on Si, with concentrations in the range 0 ≤ y ≤ 0.04, are studied via a variety of methods. The first microelectronic devices from GeSn films were fabricated using newly developed CMOS-compatible protocols, and the devices were characterized with respect to their electrical properties and optical response.

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    Date Created
    • 2011
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  • Text
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    • Partial requirement for: Ph.D., Arizona State University, 2011
      Note type
      thesis
    • Includes bibliographical references (p. 145-153)
      Note type
      bibliography
    • Field of study: Physics

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    by Jay Mathews

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