Programmable Metallization Cell (PMC) is a resistance-switching device based on migration of nanoscale quantities of cations in a solid electrolyte and formation of a conducting electrodeposit by the reductions of these cations. This dissertation presents electrical characterization results on Cu-SiO2 based PMC devices, which due to the na- ture of materials can be easily integrated into the current Complimentary metal oxide semiconductor (CMOS) process line.
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- Partial requirement for: Ph.D., Arizona State University, 2011Note typethesis
- Includes bibliographical references (p. 96-101)Note typebibliography
- Field of study: Electrical engineering