Description

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco[superscript ®] Atlas, a drift-diffusion based commercial software, to model diamond based power devices.

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Date Created
  • 2016-06-08
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4953385
    • Identifier Type
      International standard serial number
      Identifier Value
      0021-8979
    • Identifier Type
      International standard serial number
      Identifier Value
      1089-7550
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    This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.

    Hathwar, R., Dutta, M., Koeck, F. A., Nemanich, R. J., Chowdhury, S., & Goodnick, S. M. (2016). Temperature dependent simulation of diamond depleted Schottky PIN diodes. Journal of Applied Physics, 119(22), 225703. doi:10.1063/1.4953385

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