Description
Wide bandgap semiconductors are of much current interest due to their superior electrical properties. This dissertation describes electron microscopy characterization of GaN-on-GaN structures for high-power vertical device applications.
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Contributors
- Peri, Prudhvi Ram (Author)
- Smith, David J. (Thesis advisor)
- Alford, Terry (Committee member)
- Mccartney, Martha R (Committee member)
- Nemanich, Robert (Committee member)
- Zhao, Yuji (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2021
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Note
- Partial requirement for: Ph.D., Arizona State University, 2021
- Field of study: Materials Science and Engineering