This work focuses on the existence of multiple resistance states in a type of emerging non-volatile resistive memory device known commonly as Programmable Metallization Cell (PMC) or Conductive Bridge Random Access Memory (CBRAM), which can be important for applications such as multi-bit memory as well as non-volatile logic and neuromorphic computing. First, experimental data from small signal, quasi-static and pulsed mode electrical characterization of such devices are presented which clearly demonstrate the inherent multi-level resistance programmability property in CBRAM devices.
Download count: 0
- Partial requirement for: Ph.D., Arizona State University, 2015Note typethesis
- Includes bibliographical references (pages 128-140)Note typebibliography
- Field of study: Electrical engineering