Description
This work focuses on the existence of multiple resistance states in a type of emerging non-volatile resistive memory device known commonly as Programmable Metallization Cell (PMC) or Conductive Bridge Random Access Memory (CBRAM), which can be important for applications such as multi-bit memory as well as non-volatile logic and neuromorphic computing.
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Contributors
- Mahalanabis, Debayan (Author)
- Barnaby, Hugh J. (Thesis advisor)
- Kozicki, Michael N. (Committee member)
- Vrudhula, Sarma (Committee member)
- Yu, Shimeng (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2015
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Note
- Partial requirement for: Ph.D., Arizona State University, 2015Note typethesis
- Includes bibliographical references (pages 128-140)Note typebibliography
- Field of study: Electrical engineering
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Statement of Responsibility
by Debayan Mahalanabis