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Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position.

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    Date Created
    2015
    Resource Type
  • Text
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    Note
    • Partial requirement for: Ph. D., Arizona State University, 2015
      Note type
      thesis
    • Includes bibliographical references (pages 100-105)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Wei-Chieh Kao

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