Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) technology has made significant progress in recent years, there are still a number of issues to be overcome before more commercial SiC devices can enter the market.
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- Partial requirement for: Ph. D., Arizona State University, 2015Note typethesis
- Includes bibliographical references (pages 100-105)Note typebibliography
- Field of study: Electrical engineering