Description
Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position.
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Contributors
- Kao, Wei-Chieh (Author)
- Goryll, Michael (Thesis advisor)
- Chowdhury, Srabanti (Committee member)
- Yu, Hongbin (Committee member)
- Marinella, Matthew (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2015
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Note
- Partial requirement for: Ph. D., Arizona State University, 2015Note typethesis
- Includes bibliographical references (pages 100-105)Note typebibliography
- Field of study: Electrical engineering
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by Wei-Chieh Kao