Description
The aging process due to Bias Temperature Instability (both NBTI and PBTI) and Channel Hot Carrier (CHC) is a key limiting factor of circuit lifetime in CMOS design. Threshold voltage shift due to BTI is a strong function of stress voltage and temperature complicating stress and recovery prediction. This poses a unique challenge for long-term aging prediction for wide range of stress patterns.
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Contributors
- Sutaria, Ketul (Author)
- Cao, Yu (Thesis advisor)
- Bakkaloglu, Bertan (Committee member)
- Chakrabarti, Chaitali (Committee member)
- Yu, Shimeng (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2014
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- Partial requirement for: Ph.D., Arizona State University, 2014Note typethesis
- Includes bibliographical references (p. 86-92)Note typebibliography
- Field of study: Electrical engineering
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by Ketul Sutaria