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Semiconductor nanowires are important candidates for highly scaled three dimensional electronic devices. It is very advantageous to combine their scaling capability with the high yield of planar CMOS technology by

Semiconductor nanowires are important candidates for highly scaled three dimensional electronic devices. It is very advantageous to combine their scaling capability with the high yield of planar CMOS technology by integrating nanowire devices into planar circuits. The purpose of this research is to identify the challenges associated with the fabrication of vertically oriented Si and Ge nanowire diodes and modeling their electrical behavior so that they can be utilized to create unique three dimensional architectures that can boost the scaling of electronic devices into the next generation.

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    Date Created
    • 2014
    Resource Type
  • Text
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    • Partial requirement for: Ph.D., Arizona State University, 2014
      Note type
      thesis
    • Includes bibliographical references (p. 136-141)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Nishant Chandra

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