Description
In this dissertation, far UV spectroscopy is applied to investigate the optical properties of dielectric thin films grown by atomic layer deposition. The far UV (120 – 200 nm) reflectance for several dielectric oxides and fluorides, including AlF3, Al2O3, Ga2O3, HfO2, and SiO2, was measured at variable angles and thicknesses.
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Contributors
- Huang, Zhiyu (Author)
- Nemanich, Robert (Thesis advisor)
- Ponce, Fernando (Committee member)
- Menéndez, Jose (Committee member)
- Holman, Zachary (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2021
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Note
- Partial requirement for: Ph.D., Arizona State University, 2021
- Field of study: Physics