Description
InAsBi is a narrow direct gap III-V semiconductor that has recently attracted considerable attention because its bandgap is tunable over a wide range of mid- and long-wave infrared wavelengths for optoelectronic applications. Furthermore, InAsBi can be integrated with other III-V materials and is potentially an alternative to commercial II-VI photodetector materials such as HgCdTe.
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Contributors
- Shalindar Christraj, Arvind Joshua Jaydev (Author)
- Johnson, Shane R (Thesis advisor)
- Alford, Terry L. (Committee member)
- Goryll, Michael (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2016
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Note
- Partial requirement for: M.S., Arizona State University, 2016Note typethesis
- Includes bibliographical references (pages 76-78)Note typebibliography
- Field of study: Materials science and engineering
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by Arvind Joshua Jaydev Shalindar Christraj