III-nitride InGaN light-emitting diodes (LEDs) enable wide range of applications in solid-state lighting, full-color displays, and high-speed visible-light communication. Conventional InGaN quantum well LEDs grown on polar c-plane substrate suffer from quantum confined Stark effect due to the large internal polarization-related fields, leading to a reduced radiative recombination rate and device efficiency, which limits the performance of InGaN LEDs in high-speed communication applications.
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- Partial requirement for: M.S., Arizona State University, 2016Note typethesis
- Includes bibliographical references (pages 35-38)Note typebibliography
- Field of study: Electrical engineering