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III-nitride InGaN light-emitting diodes (LEDs) enable wide range of applications in solid-state lighting, full-color displays, and high-speed visible-light communication. Conventional InGaN quantum well LEDs grown on polar c-plane substrate suffer

III-nitride InGaN light-emitting diodes (LEDs) enable wide range of applications in solid-state lighting, full-color displays, and high-speed visible-light communication. Conventional InGaN quantum well LEDs grown on polar c-plane substrate suffer from quantum confined Stark effect due to the large internal polarization-related fields, leading to a reduced radiative recombination rate and device efficiency, which limits the performance of InGaN LEDs in high-speed communication applications.

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    Date Created
    • 2016
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  • Text
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    • Partial requirement for: M.S., Arizona State University, 2016
      Note type
      thesis
    • Includes bibliographical references (pages 35-38)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Hong Chen

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