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Semiconductor manufacturing economics necessitate the development of innovative device measurement techniques for quick assessment of products. Several novel electrical measurement techniques will be proposed for screening silicon device parameters. The

Semiconductor manufacturing economics necessitate the development of innovative device measurement techniques for quick assessment of products. Several novel electrical measurement techniques will be proposed for screening silicon device parameters. The studied parameters range from oxide reliability, and carrier lifetime in MOS capacitors to the power MOSFET reverse recovery.

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    Date Created
    • 2015
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  • Text
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    • Partial requirement for: Ph.D., Arizona State University, 2015
      Note type
      thesis
    • Field of study: Materials science and engineering

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    by Arash Elhami Khorasani

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