Description
Group III-nitride semiconductors have wide application in optoelectronic devices. Spontaneous and piezoelectric polarization effects have been found to be critical for electric and optical properties of group III-nitrides. In this dissertation, firstly, the crystal orientation dependence of the polarization is calculated and in-plane polarization is revealed.
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Contributors
- Wei, Qiyuan (Author)
- Ponce, Fernando A. (Thesis advisor)
- Tsen, Kong-Thon (Committee member)
- Shumway, John (Committee member)
- Menéndez, Jose (Committee member)
- Smith, David (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2012
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Note
- Partial requirement for: Ph.D., Arizona State University, 2012Note typethesis
- Includes bibliographical referencesNote typebibliography
- Field of study: Physics
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Statement of Responsibility
by Qiyuan Wei