The chemical sensitivity and spatial resolution of Raman spectroscopy, combined with the sensitivity of modern systems that can easily detect single atomic layers, have made this technique a preferred choice for the strain characterization of complex systems such as nanoscale complementary metal-oxide-semiconductor - CMOS - devices.
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- Partial requirement for: Ph.D., Arizona State University, 2011Note typethesis
- Includes bibliographical references (p. 101-106)Note typebibliography
- Field of study: Physics