Process variations have become increasingly important for scaled technologies starting at 45nm. The increased variations are primarily due to random dopant fluctuations, line-edge roughness and oxide thickness fluctuation. These variations greatly impact all aspects of circuit performance and pose a grand challenge to future robust IC design.
Download count: 0
- Partial requirement for: M.S., Arizona State University, 2011Note typethesis
- Includes bibliographical references (p. 60-62)Note typebibliography
- Field of study: Electrical engineering