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Process variations have become increasingly important for scaled technologies starting at 45nm. The increased variations are primarily due to random dopant fluctuations, line-edge roughness and oxide thickness fluctuation. These variations greatly impact all aspects of circuit performance and pose a grand challenge to future robust IC design.

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    Date Created
    2011
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  • Text
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    Note
    • Partial requirement for: M.S., Arizona State University, 2011
      Note type
      thesis
    • Includes bibliographical references (p. 60-62)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Samatha Gummalla

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