Description
Process variations have become increasingly important for scaled technologies starting at 45nm. The increased variations are primarily due to random dopant fluctuations, line-edge roughness and oxide thickness fluctuation. These variations greatly impact all aspects of circuit performance and pose a grand challenge to future robust IC design.
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Contributors
- Gummalla, Samatha (Author)
- Chakrabarti, Chaitali (Thesis advisor)
- Cao, Yu (Thesis advisor)
- Bakkaloglu, Bertan (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2011
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Note
- Partial requirement for: M.S., Arizona State University, 2011Note typethesis
- Includes bibliographical references (p. 60-62)Note typebibliography
- Field of study: Electrical engineering
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Statement of Responsibility
by Samatha Gummalla