Full metadata
Title
Metal-oxide based transparent conductive oxides and thin film transistors for flexible electronics
Description
The object of this study is to investigate and improve the performance/stability of the flexible thin film transistors (TFTs) and to study the properties of metal oxide transparent conductive oxides for wide range of flexible electronic applications. Initially, a study has been done to improve the conductivity of ITO (indium tin oxide) films on PEN (polyethylene naphthalate) by inserting a thin layer of silver layer between two ITO layers. The multilayer with an optimum Ag mid-layer thickness, of 8 nm, exhibited excellent photopic average transmittance (~ 88 %), resistivity (~ 2.7 × 10-5 µ-cm.) and has the best Hackee figure of merit (41.0 × 10-3 Ω-1). The electrical conduction is dominated by two different scattering mechanisms depending on the thickness of the Ag mid-layer. Optical transmission is explained by scattering losses and absorption of light due to inter-band electronic transitions. A systematic study was carried out to improve the performance/stability of the TFTs on PEN. The performance and stability of a-Si:H and a-IZO (amorphous indium zinc oxide) TFTs were improved by performing a systematic low temperature (150 °C) anneals for extended times. For 96 hours annealed a-Si:H TFTs, the sub-threshold slope and off-current were reduced by a factor ~ 3 and by 2 orders of magnitude, respectively when compared to unannealed a-Si:H TFTs. For a-IZO TFTs, 48 hours of annealing is found to be the optimum time for the best performance and elevated temperature stability. These devices exhibit saturation mobility varying between 4.5-5.5 cm2/V-s, ION/IOFF ratio was 106 and a sub-threshold swing variation of 1-1.25 V/decade. An in-depth study on the mechanical and electromechanical stress response on the electrical properties of the a-IZO TFTs has also been investigated. Finally, the a-Si:H TFTs were exposed to gamma radiation to examine their radiation resistance. The interface trap density (Nit) values range from 5 to 6 × 1011 cm-2 for only electrical stress bias case. For "irradiation only" case, the Nit value increases from 5×1011 cm-2 to 2×1012 cm-2 after 3 hours of gamma radiation exposure, whereas it increases from 5×1011 cm-2 to 4×1012 cm-2 for "combined gamma and electrical stress".
Date Created
2011
Contributors
- Indluru, Anil (Author)
- Alford, Terry L. (Thesis advisor)
- Schroder, Dieter (Committee member)
- Krause, Stephen (Committee member)
- Theodore, David (Committee member)
- Arizona State University (Publisher)
Topical Subject
Resource Type
Extent
xvi, 138 p. : ill. (some col.)
Language
Copyright Statement
In Copyright
Primary Member of
Peer-reviewed
No
Open Access
No
Handle
https://hdl.handle.net/2286/R.I.8850
Statement of Responsibility
by Anil Indluru
Description Source
Retrieved Sept. 21, 2012
Level of coding
full
Note
Partial requirement for: Ph.D., Arizona State University, 2011
Note type
thesis
Includes bibliographical references (p. 124-138)
Note type
bibliography
Field of study: Materials science and engineering
System Created
- 2011-08-12 03:28:15
System Modified
- 2021-08-30 01:55:35
- 2 years 8 months ago
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