Design and Optimization of Resistive RAM-based Storage and Computing Systems

The Resistive Random Access Memory (ReRAM) is an emerging non-volatile memory

technology because of its attractive attributes, including excellent scalability (< 10 nm), low

programming voltage (< 3 V), fast switching speed (< 10 ns), high OFF/ON ratio (> 10),

good endurance (up to 1012 cycles) and great compatibility with silicon CMOS technology [1].