Description

The Resistive Random Access Memory (ReRAM) is an emerging non-volatile memory

technology because of its attractive attributes, including excellent scalability (< 10 nm), low

programming voltage (< 3 V), fast switching speed

The Resistive Random Access Memory (ReRAM) is an emerging non-volatile memory

technology because of its attractive attributes, including excellent scalability (< 10 nm), low

programming voltage (< 3 V), fast switching speed (< 10 ns), high OFF/ON ratio (> 10),

good endurance (up to 1012 cycles) and great compatibility with silicon CMOS technology [1].

However, ReRAM suffers from larger write latency, energy and reliability issue compared to

3.2 MB application/pdf

Download count: 0

Details

Contributors
Date Created
  • 2019
Resource Type
  • Text
  • Collections this item is in
    Note
    • Doctoral Dissertation Electrical Engineering 2019

    Machine-readable links