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Hydrogen sulfide (H2S) has been identified as a potential ingredient for grain boundary passivation of multicrystalline silicon. Sulfur is already established as a good surface passivation material for crystalline silicon

Hydrogen sulfide (H2S) has been identified as a potential ingredient for grain boundary passivation of multicrystalline silicon. Sulfur is already established as a good surface passivation material for crystalline silicon (c-Si). Sulfur can be used both from solution and hydrogen sulfide gas.

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    Date Created
    • 2014
    Resource Type
  • Text
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    Note
    • Partial requirement for: M.S., Arizona State University, 2014
      Note type
      thesis
    • Includes bibliographical references (p. 54-56)
      Note type
      bibliography
    • Field of study: Electrical engineering

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    by Arunodoy Saha

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