Hydrogen sulfide (H2S) has been identified as a potential ingredient for grain boundary passivation of multicrystalline silicon. Sulfur is already established as a good surface passivation material for crystalline silicon (c-Si). Sulfur can be used both from solution and hydrogen sulfide gas.
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- Partial requirement for: M.S., Arizona State University, 2014Note typethesis
- Includes bibliographical references (p. 54-56)Note typebibliography
- Field of study: Electrical engineering