Description
Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7 μm achievable using lattice matched GaInAs.
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Contributors
- Sharma, Ankur R (Author)
- Johnson, Shane (Thesis advisor)
- Goryll, Michael (Committee member)
- Roedel, Ronald (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2013
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Note
- Partial requirement for: M.S., Arizona State University, 2013Note typethesis
- Includes bibliographical refernces (p. 97-103)Note typebibliography
- Field of study: Electrical engineering
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by Ankur R. Sharma