The high cut-off frequency of deep sub-micron CMOS technologies has enabled the integration of radio frequency (RF) transceivers with digital circuits. However, the challenging point is the integration of RF power amplifiers, mainly due to the low breakdown voltage of CMOS transistors. Silicon-on-insulator (SOI) metal semiconductor field effect transistors (MESFETs) have been introduced to remedy the limited headroom concern in CMOS technologies.
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- Partial requirement for: Ph.D., Arizona State University, 2012Note typethesis
- Includes bibliographical references (p. 116-121)Note typebibliography
- Field of study: Electrical engineering