Description
The high cut-off frequency of deep sub-micron CMOS technologies has enabled the integration of radio frequency (RF) transceivers with digital circuits. However, the challenging point is the integration of RF power amplifiers, mainly due to the low breakdown voltage of CMOS transistors.
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Contributors
- Ghajar, Mohammad Reza (Author)
- Thornton, Trevor (Thesis advisor)
- Aberle, James T., 1961- (Committee member)
- Bakkaloglu, Bertan (Committee member)
- Goryll, Michael (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2012
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Note
- Partial requirement for: Ph.D., Arizona State University, 2012Note typethesis
- Includes bibliographical references (p. 116-121)Note typebibliography
- Field of study: Electrical engineering
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Statement of Responsibility
by Mohammad Reza Ghajar