Description
III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced over the past decade.
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- Hill, Arlinda (Author)
- Ponce, Fernando A. (Thesis advisor)
- Chamberlin, Ralph V (Committee member)
- Sankey, Otto F (Committee member)
- Smith, David J. (Committee member)
- Tsen, Kong-Thon (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2011
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- Partial requirement for: Ph.D., Arizona State University, 2011Note typethesis
- Includes bibliographical references (p. 103-110)Note typebibliography
- Field of study: Physics
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by Arlinda Hill