III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced over the past decade. But the progress of green emission light emitting devices has been limited by the incorporation of indium in the alloy, mainly due to phase separation. This difficulty could be addressed by studying the growth and thermodynamics of these alloys.
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- Partial requirement for: Ph.D., Arizona State University, 2011Note typethesis
- Includes bibliographical references (p. 103-110)Note typebibliography
- Field of study: Physics