Description

The work described in this thesis explores the synthesis of new semiconductors in the Si-Ge-Sn system for application in Si-photonics. Direct gap Ge1-ySny (y=0.12-0.16) alloys with enhanced light emission and

The work described in this thesis explores the synthesis of new semiconductors in the Si-Ge-Sn system for application in Si-photonics. Direct gap Ge1-ySny (y=0.12-0.16) alloys with enhanced light emission and absorption are pursued. Monocrystalline layers are grown on Si platforms via epitaxy-driven reactions between Sn- and Ge-hydrides using compositionally graded buffer layers that mitigate lattice mismatch between the epilayer and Si platforms.

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Date Created
  • 2018
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  • Text
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    Note
    • Partial requirement for: Ph.D., Arizona State University, 2018
      Note type
      thesis
    • Includes bibliographical references (pages 158-173)
      Note type
      bibliography
    • Field of study: Chemistry

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    by Patrick Michael Wallace

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