The work described in this thesis explores the synthesis of new semiconductors in the Si-Ge-Sn system for application in Si-photonics. Direct gap Ge1-ySny (y=0.12-0.16) alloys with enhanced light emission and absorption are pursued. Monocrystalline layers are grown on Si platforms via epitaxy-driven reactions between Sn- and Ge-hydrides using compositionally graded buffer layers that mitigate lattice mismatch between the epilayer and Si platforms.
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- Partial requirement for: Ph.D., Arizona State University, 2018Note typethesis
- Includes bibliographical references (pages 158-173)Note typebibliography
- Field of study: Chemistry