Description
High-k dielectrics have been employed in the metal-oxide semiconductor field effect transistors (MOSFETs) since 45 nm technology node. In this MOSFET industry, Moore’s law projects the feature size of MOSFET scales half within every 18 months. Such scaling down theory has not only led to the physical limit of manufacturing but also raised the reliability issues in MOSFETs.
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Contributors
- Fang, Runchen (Author)
- Barnaby, Hugh J (Thesis advisor)
- Kozicki, Michael N (Thesis advisor)
- Vasileska, Dragica (Committee member)
- Thornton, Trevor J (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2018
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Note
- Doctoral Dissertation Electrical Engineering 2018