The electronic states of semiconductor interfaces have significant importance for semiconductor device performance, especially due to the continuing miniaturization of device technology.
The application of ultra high vacuum (UHV) enables the preparation and characterization of fresh and cleaned interfaces. In a UHV environment, photoemission spectroscopy (PES) provides a non-destructive method to measure the electronic band structure, which is a crucial component of interface properties.
Download count: 0
- Partial requirement for: Ph.D., Arizona State University, 2018Note typethesis
- Includes bibliographical referencesNote typebibliography
- Field of study: Materials science and engineering