Description
Non-volatile memories (NVM) are widely used in modern electronic devices due to their non-volatility, low static power consumption and high storage density. While Flash memories are the dominant NVM technology, resistive memories such as phase change access memory (PRAM) and spin torque transfer random access memory (STT-MRAM) are gaining ground.
Download count: 0
Details
Contributors
- Yang, Chengen (Author)
- Chakrabarti, Chaitali (Thesis advisor)
- Cao, Yu (Committee member)
- Ogras, Umit Y. (Committee member)
- Bakkaloglu, Bertan (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2014
Subjects
Resource Type
Collections this item is in
Note
- Partial requirement for: Ph.D., Arizona State University, 2014Note typethesis
- Includes bibliographical references (p. 156-164)Note typebibliography
- Field of study: Electrical engineering
Citation and reuse
Statement of Responsibility
by Chengen Yang