Description
Non-volatile memories (NVM) are widely used in modern electronic devices due to their non-volatility, low static power consumption and high storage density. While Flash memories are the dominant NVM technology, resistive memories such as phase change access memory (PRAM) and spin torque transfer random access memory (STT-MRAM) are gaining ground.
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Contributors
- Yang, Chengen (Author)
- Chakrabarti, Chaitali (Thesis advisor)
- Cao, Yu (Committee member)
- Ogras, Umit Y. (Committee member)
- Bakkaloglu, Bertan (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2014
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Note
- Partial requirement for: Ph.D., Arizona State University, 2014Note typethesis
- Includes bibliographical references (p. 156-164)Note typebibliography
- Field of study: Electrical engineering
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by Chengen Yang