Description
Silicon Carbide (SiC) junction field effect transistors (JFETs) are ideal for switching high current, high voltage loads in high temperature environments. These devices require external drive circuits to generate pulse width modulated (PWM) signals switching from 0V to approximately 10V.
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Contributors
- Summers, Nicholas, M.S (Author)
- Thornton, Trevor J (Thesis advisor)
- Goryll, Michael (Committee member)
- Schroder, Dieter (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2010
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Note
- Partial requirement for: M.S., Arizona State University, 2010Note typethesis
- Includes bibliographical references (p. 57-58)Note typebibliography
- Field of study: Electrical engineering
Citation and reuse
Statement of Responsibility
by Nicholas Summers