Description

GaN-based devices are currently limited by reliability issues such as gate leakage and current collapse, where the mechanisms responsible for degradation are closely related to the electronic surface state configuration.

GaN-based devices are currently limited by reliability issues such as gate leakage and current collapse, where the mechanisms responsible for degradation are closely related to the electronic surface state configuration. Therefore, understanding the electronic surface state configuration of GaN-based materials will help improve device performance. Since GaN has an inherent polarization, these materials are also subject to a bound polarization charge, which influences the electronic state configuration.

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Date Created
  • 2014-12-01
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  • Text
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    Identifier
    • Digital object identifier: 10.1007/s11664-014-3383-z
    • Identifier Type
      International standard serial number
      Identifier Value
      0361-5235
    • Identifier Type
      International standard serial number
      Identifier Value
      1543-186X
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    Eller, Brianna S., Yang, Jialing, & Nemanich, Robert J. (2014). Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States. JOURNAL OF ELECTRONIC MATERIALS, 43(12), 4560-4568. http://link.springer.com.ezproxy1.lib.asu.edu/article/10.1007/s11664-014-3383-z

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