Description

Novel hydride chemistries are employed to deposit light-emitting Ge [subscript 1- y] Sn [subscript y] alloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The

Novel hydride chemistries are employed to deposit light-emitting Ge [subscript 1- y] Sn [subscript y] alloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities.

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Date Created
  • 2014-10-07
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4896788
    • Identifier Type
      International standard serial number
      Identifier Value
      0272-4944
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    • Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 116, 13 (2014) and may be found at http://dx.doi.org/10.1063/1.4896788, opens in a new window

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    This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.

    Senaratne, C. L., Gallagher, J. D., Jiang, Liying, Aoki, Toshihiro, Smith, D. J., Menendez, J., & Kouvetakis, J. (2014). Ge1-ySny (y=0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties. JOURNAL OF APPLIED PHYSICS, 116(13), 0-0. http://dx.doi.org/10.1063/1.4896788

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