Novel hydride chemistries are employed to deposit light-emitting Ge1-y Snyalloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers.

pdf (0 B)

Download count: 0


Date Created
Resource Type
  • Text
  • Collections this item is in
    • Digital object identifier: 10.1063/1.4896788
    • Identifier Type
      International standard serial number
      Identifier Value
    • Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 116, 13 (2014) and may be found at, opens in a new window

    Citation and reuse

    Cite this item

    This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.

    Senaratne, C. L., Gallagher, J. D., Jiang, Liying, Aoki, Toshihiro, Smith, D. J., Menendez, J., & Kouvetakis, J. (2014). Ge1-ySny (y=0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties. JOURNAL OF APPLIED PHYSICS, 116(13), 0-0.

    Machine-readable links