Description
Novel hydride chemistries are employed to deposit light-emitting Ge1-y Snyalloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers.
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Contributors
- Senaratne, Charutha Lasitha (Author)
- Gallagher, J. D. (Author)
- Jiang, Liying (Author)
- Aoki, Toshihiro (Author)
- Smith, David (Author)
- Menéndez, Jose (Author)
- Kouvetakis, John (Author)
- Department of Chemistry and Biochemistry (Contributor)
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2014-10-07
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- Digital object identifier: 10.1063/1.4896788
- Identifier TypeInternational standard serial numberIdentifier Value0272-4944
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- Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 116, 13 (2014) and may be found at http://dx.doi.org/10.1063/1.4896788, opens in a new window
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Senaratne, C. L., Gallagher, J. D., Jiang, Liying, Aoki, Toshihiro, Smith, D. J., Menendez, J., & Kouvetakis, J. (2014). Ge1-ySny (y=0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties. JOURNAL OF APPLIED PHYSICS, 116(13), 0-0. http://dx.doi.org/10.1063/1.4896788