Description
Diamond as a wide-bandgap (WBG) semiconductor material has distinct advantages for power electronics applications over Si and other WBG materials due to its high critical electric field (> 10 MV/cm), high electron and hole mobility (??=4500 cm2/V-s, ??=3800 cm2/V-s), high thermal conductivity (~22 W/cm-K) and large bandgap (5.47 eV).
Copyright Statement
Download count: 0
Details
Contributors
- Surdi, Harshad (Author)
- Goodnick, Stephen M (Thesis advisor)
- Nemanich, Robert J (Committee member)
- Thornton, Trevor J (Committee member)
- Lyons, James R (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2022
Subjects
Resource Type
Collections this item is in
Note
- Partial requirement for: Ph.D., Arizona State University, 2022
- Field of study: Electrical Engineering