Description
The evolution of defects at different stages of strain relaxation in low-mismatched GaAs/GaAs1-xSbx/GaAs(001) (x ~ 0.08) heterostructures, and the underlying relaxation mechanisms, have been comprehensively studied primarily using transmission electron microscopy (TEM).
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Contributors
- Gangopadhyay, Abhinandan (Author)
- Smith, David J. (Thesis advisor)
- Bertoni, Mariana (Committee member)
- Crozier, Peter A. (Committee member)
- King, Richard R. (Committee member)
- McCartney, Martha R. (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2021
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Note
- Partial requirement for: Ph.D., Arizona State University, 2021
- Field of study: Materials Science and Engineering