Description
In this project, current-voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements are used to (a) characterize the electrical properties of Nb/p-type Si Schottky barriers, (b) identify the concentration and physical character of the electrically active defects present in the

In this project, current-voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements are used to (a) characterize the electrical properties of Nb/p-type Si Schottky barriers, (b) identify the concentration and physical character of the electrically active defects present in the depletion region, and (c) use thermal processing to reduce the concentration or eliminate the defects. Barrier height determinations using temperature-dependent I-V measurements indicate that the barrier height decreases from 0.50 eV to 0.48 eV for anneals above 200 C. The electrically-active defect concentration measured using DLTS (deep level transient spectroscopy) drops markedly after anneals at 250 C.

A significant increase in leakage currents is almost always observed in near-ideal devices upon annealing. In contrast, non-ideal devices dominated by leakage currents annealed at 150 C to 250 C exhibit a significant decrease in such currents.
Downloads
pdf (1.3 MB)

Details

Title
  • Characterization of electrically active defects at Nb/Si interface using current transport and transient capacitance measurements
Contributors
Date Created
2018
Resource Type
  • Text
  • Collections this item is in
    Note
    • Partial requirement for: M.S., Arizona State University, 2018
      Note type
      thesis
    • Includes bibliographical references (pages 39-40)
      Note type
      bibliography
    • Field of study: Materials science and engineering

    Citation and reuse

    Statement of Responsibility

    by Madhu Krishna Murthy

    Machine-readable links