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In this project, current-voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements are used to (a) characterize the electrical properties of Nb/p-type Si Schottky barriers, (b) identify the concentration and

In this project, current-voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements are used to (a) characterize the electrical properties of Nb/p-type Si Schottky barriers, (b) identify the concentration and physical character of the electrically active defects present in the depletion region, and (c) use thermal processing to reduce the concentration or eliminate the defects. Barrier height determinations using temperature-dependent I-V measurements indicate that the barrier height decreases from 0.50 eV to 0.48 eV for anneals above 200 C.

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Date Created
  • 2018
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  • Text
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    Note
    • Partial requirement for: M.S., Arizona State University, 2018
      Note type
      thesis
    • Includes bibliographical references (pages 39-40)
      Note type
      bibliography
    • Field of study: Materials science and engineering

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    by Madhu Krishna Murthy

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