Description

Ge1-xSnx and SiyGe1-x-ySnx materials are being researched intensively for applications in infra-red optoelectronic devices. Due to their direct band gap these materials may in-fact be the enabling factor in the

Ge1-xSnx and SiyGe1-x-ySnx materials are being researched intensively for applications in infra-red optoelectronic devices. Due to their direct band gap these materials may in-fact be the enabling factor in the commercial realization of silicon photonics/group IV photonics and the integration of nanophotonics with nanoelectronics. However the synthesis of these meta-stable semiconductor alloys, with a range of Sn-compositions, remains the primary technical challenge.

Reuse Permissions
  • 3.01 MB application/pdf

    Download count: 0

    Details

    Contributors
    Date Created
    • 2018
    Resource Type
  • Text
  • Collections this item is in
    Note
    • Doctoral Dissertation Electrical Engineering 2018

    Machine-readable links