Matching Items (99)

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Development of a Head's Up Display (HU)

Description

Head's up displays (HUD) are now emerging into the technological market that is used in various functionalities, but most of all, they are expensive. An alternative method to find cheaper

Head's up displays (HUD) are now emerging into the technological market that is used in various functionalities, but most of all, they are expensive. An alternative method to find cheaper ways to develop a head's up display is researched and implemented. The HUD is equipped with a processor and projector. Both of these hardware components encompasses most part of the HUD along with some manipulation of the material that the image is projected on. In this study, the software and the optics of the HUD will be explored and lastly, taking into full consideration on the future work that can be done to make improvements on the HUD.

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Date Created
  • 2014-05

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Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy

Description

A CdZnTe/MgCdTe double-heterostructure (DH) consisting of a 3 μm thick Cd[subscript 0.9946] Zn[subscript 0.0054]Te middle layer that is lattice-matched to an InSb substrate has been grown using molecular beam epitaxy. A

A CdZnTe/MgCdTe double-heterostructure (DH) consisting of a 3 μm thick Cd[subscript 0.9946] Zn[subscript 0.0054]Te middle layer that is lattice-matched to an InSb substrate has been grown using molecular beam epitaxy. A long carrier lifetime of 3.4 × 10[superscript 2] ns has been demonstrated at room temperature, which is approximately three times as long as that of a CdTe/MgCdTe DH with identical layer thickness. This substantial improvement is due to the reduction in misfit dislocation density in the CdZnTe alloy. In contrast, a CdTe/MgCdTe DH with 3 μm thick CdTe layer grown on an InSb substrate exhibits a strain relaxation of ∼30%, which leads to a wider x-ray diffraction peak, a weaker integrated photoluminescence intensity, and a shorter minority carrier lifetime of 1.0 × 10[superscript 2] ns. These findings indicate that CdZnTe lattice-matched to InSb has great potential as applied to high-efficiency solar cells as well as virtual substrates for high-performance large-area HgCdTe focal plane arrays.

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Created

Date Created
  • 2015-01-01