Rapid processing and reduced end-of-range diffusion effects demonstrate that susceptor-assisted microwave annealing is an efficient processing alternative for electrically activating dopants and removing ion-implantation damage in ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation. Raman spectroscopy and ion channeling analysis monitor the extent of ion implantation damage and recrystallization.
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- Partial requirement for: M.S., Arizona State University, 2013Note typethesis
- Includes bibliographical references (p. 41-44)Note typebibliography
- Field of study: Materials science and engineering