Description
Rapid processing and reduced end-of-range diffusion effects demonstrate that susceptor-assisted microwave annealing is an efficient processing alternative for electrically activating dopants and removing ion-implantation damage in ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation.
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Contributors
- Zhao, Zhao (Author)
- Alford, Terry Lynn (Thesis advisor)
- Theodore, David (Committee member)
- Krause, Stephen (Committee member)
- Arizona State University (Publisher)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2013
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Note
- Partial requirement for: M.S., Arizona State University, 2013Note typethesis
- Includes bibliographical references (p. 41-44)Note typebibliography
- Field of study: Materials science and engineering
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by Zhao Zhao