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Rapid processing and reduced end-of-range diffusion effects demonstrate that susceptor-assisted microwave annealing is an efficient processing alternative for electrically activating dopants and removing ion-implantation damage in ion-implanted semiconductors. Sheet resistance

Rapid processing and reduced end-of-range diffusion effects demonstrate that susceptor-assisted microwave annealing is an efficient processing alternative for electrically activating dopants and removing ion-implantation damage in ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation. Raman spectroscopy and ion channeling analysis monitor the extent of ion implantation damage and recrystallization.

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    Date Created
    • 2013
    Resource Type
  • Text
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    Note
    • Partial requirement for: M.S., Arizona State University, 2013
      Note type
      thesis
    • Includes bibliographical references (p. 41-44)
      Note type
      bibliography
    • Field of study: Materials science and engineering

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    by Zhao Zhao

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