Full metadata
Title
Growth of InGaN nanorings via metal organic chemical vapor deposition
Description
III-Nitride nanostructures have been an active area of research recently due to their ability to tune their optoelectronic properties. Thus far work has been done on InGaN quantum dots, nanowires, nanopillars, amongst other structures, but this research reports the creation of a new type of InGaN nanostructure, nanorings. Hexagonal InGaN nanorings were formed using Metal Organic Chemical Vapor Deposition through droplet epitaxy. The nanorings were thoroughly analyzed using x-ray diffraction, photoluminescence, electron microscopy, electron diffraction, and atomic force microscopy. Nanorings with high indium incorporation were achieved with indium content up to 50% that was then controlled using the growth time, temperature, In/Ga ratio and III/N ratio. The analysis showed that the nanoring shape is able to incorporate more indium than other nanostructures, due to the relaxing mechanism involved in the formation of the nanoring. The ideal conditions were determined to be growth of 30 second droplets with a growth time of 1 minute 30 seconds at 770 C to achieve the most well developed rings with the highest indium concentration.
Date Created
2012
Contributors
- Zaidi, Zohair (Author)
- Mahajan, Subhash (Thesis advisor)
- O'Connell, Michael J (Committee member)
- Krause, Stephen (Committee member)
- Arizona State University (Publisher)
Topical Subject
Resource Type
Extent
80 p
Language
Copyright Statement
In Copyright
Primary Member of
Peer-reviewed
No
Open Access
No
Handle
https://hdl.handle.net/2286/R.I.15914
Statement of Responsibility
by Zohair Zaidi
Description Source
Viewed on Sep. 4, 2013
Level of coding
full
Note
Partial requirement for: M.S., Arizona State University, 2012
Note type
thesis
Field of study: Materials science and engineering
System Created
- 2013-01-17 06:36:47
System Modified
- 2021-08-30 01:44:07
- 2 years 8 months ago
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