Description
The Metal Semiconductor Field Effect Transistor (MESFET) has high potential to enter analog and RF applications due to their high breakdown voltage and switching frequency characteristics. These MESFET devices could allow for high voltage analog circuits to be integrated with low voltage digital circuits on a single chip in an extremely cost effective way.
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Contributors
- Kam, Jason (Author)
- Thornton, Trevor (Thesis director)
- Goryll, Michael (Committee member)
- Barrett, The Honors College (Contributor)
- Electrical Engineering Program (Contributor)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2015-05
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