
Description
RRAM is an emerging technology that looks to replace FLASH NOR and possibly NAND memory. It is attractive because it uses an adjustable resistance and does not rely on charge; in the sub-10nm feature size circuitry this is critical. However, RRAM cross-point arrays suffer tremendously from leakage currents that prevent proper readings in larger array sizes.
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Contributors
- Madler, Ryan Anton (Author)
- Yu, Shimeng (Thesis director)
- Cao, Yu (Committee member)
- Electrical Engineering Program (Contributor)
- Barrett, The Honors College (Contributor)
Date Created
The date the item was original created (prior to any relationship with the ASU Digital Repositories.)
2016-05
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