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The effects of surface pretreatment, dielectric growth, and post deposition annealing on interface electronic structure and polarization charge compensation of Ga- and N-face bulk GaN were investigated. The cleaning process

The effects of surface pretreatment, dielectric growth, and post deposition annealing on interface electronic structure and polarization charge compensation of Ga- and N-face bulk GaN were investigated. The cleaning process consisted of an ex-situ wet chemical NH[subscript 4]OH treatment and an in-situ elevated temperature NH[subscript 3] plasma process to remove carbon contamination, reduce oxygen coverage, and potentially passivate N-vacancy related defects.

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Date Created
  • 2014-09-28
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  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4895985
    • Identifier Type
      International standard serial number
      Identifier Value
      0272-4944
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    • Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. along with the following message: The following article appeared in 116, 123702 (2014) and may be found at http://dx.doi.org/10.1063/1.4895985, opens in a new window

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    Yang, Jialing, Eller, Brianna S., & Nemanich, Robert J. (2014). Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride. JOURNAL OF APPLIED PHYSICS, 116:123702. http://dx.doi.org/10.1063/1.4895985

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