Description

The pseudo-binary alloy of indium((x))gallium((1-x))nitride has a compositionally dependent bandgap ranging from 0.65 to 3.42 eV, making it desirable for light emitting diodes and solar cell devices. Through modeling and

The pseudo-binary alloy of indium((x))gallium((1-x))nitride has a compositionally dependent bandgap ranging from 0.65 to 3.42 eV, making it desirable for light emitting diodes and solar cell devices. Through modeling and film growth, the authors investigate the use of InxGa1-xN as an active layer in an induced junction. In an induced junction, electrostatics are used to create strong band bending at the surface of a doped material and invert the bands.

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Date Created
  • 2013-09-18
Resource Type
  • Text
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    Identifier
    • Digital object identifier: 10.1116/1.4797489
    • Identifier Type
      International standard serial number
      Identifier Value
      1365-2966
    • Identifier Type
      International standard serial number
      Identifier Value
      0035-8711
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    Williams, J. J., Williamson, T. L., Hoffbauer, M. A., Fischer, A. M., Goodnick, S. M., Faleev, N. N., . . . Honsberg, C. B. (2013). Inducing a junction in n-type InxGa(1-x)N. Journal of Vacuum Science & Technology B, 31(3), 03C127. doi:10.1116/1.4797489

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