Description

The ability of a single monolithic semiconductor structure to emit or lase in a broad spectrum range is of great importance for many applications such as solid-state lighting and multi-spectrum

The ability of a single monolithic semiconductor structure to emit or lase in a broad spectrum range is of great importance for many applications such as solid-state lighting and multi-spectrum detection. But spectral range of a laser or light-emitting diode made of a given semiconductor is typically limited by its emission or gain bandwidth. Due to lattice mismatch, it is typically difficult to grow thin film or bulk materials with very different bandgaps in a monolithic fashion. But nanomaterials such as nanowires, nanobelts, nanosheets provide a unique opportunity.

application/pdf

Download count: 0

Details

Contributors
Date Created
  • 2013-10-28
Resource Type
  • Text
  • Collections this item is in
    Identifier
    • Digital object identifier: 10.1088/0268-1242/28/6/065005
    • Identifier Type
      International standard serial number
      Identifier Value
      0268-1242
    • Identifier Type
      International standard serial number
      Identifier Value
      1361-6641
    Note

    Citation and reuse

    Cite this item

    This is a suggested citation. Consult the appropriate style guide for specific citation guidelines.

    Fan, F., Liu, Z., Yin, L., Nichols, P. L., Ning, H., Turkdogan, S., & Ning, C. Z. (2013). Simultaneous two-color lasing in a single CdSSe heterostructure nanosheet. Semiconductor Science and Technology, 28(6), 065005. doi:10.1088/0268-1242/28/6/065005

    Machine-readable links