Description

Atomic resolution transmission electron microscopy is performed to examine the strain distribution in an InAs/InAs1-xSbx superlattice grown on a (100)-GaSb substrate. The strain profiles reveal that the thickness of tensile

Atomic resolution transmission electron microscopy is performed to examine the strain distribution in an InAs/InAs1-xSbx superlattice grown on a (100)-GaSb substrate. The strain profiles reveal that the thickness of tensile regions in the superlattice is significantly lower than expected, with a corresponding increase in thickness of the compressive regions. Furthermore, significant grading is observed within the tensile regions of the strain profile, indicating Sb intermixing from the InAsSb growth surface.

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Date Created
  • 2013
Resource Type
  • Text
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    Identifier
    • Digital object identifier: 10.1063/1.4817969
    • Identifier Type
      International standard serial number
      Identifier Value
      0003-6951
    • Identifier Type
      International standard serial number
      Identifier Value
      1077-3118
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    Mahalingam, K., Steenbergen, E. H., Brown, G. J., & Zhang, Y.-H. (2013). Quantitative analysis of strain distribution in InAs/InAs1−xSbx superlattices. Applied Physics Letters, 103(6), 061908. doi:10.1063/1.4817969

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