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Description

Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.

Date Created
2014-03-26
Contributors
Language
eng
Copyright Statement
In Copyright
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Attribution
Primary Member of
ASU Scholarship Showcase
Identifier
Digital object identifier: 10.1039/c4nr00500g
International standard serial number
2040-3364
Peer-reviewed
No
Open Access
No
Series
NANOSCALE
Handle
https://hdl.handle.net/2286/R.I.25322
Preferred Citation

Zhao et al. Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations. Nanoscale 2014, 6, 5698-5702 DOI: 10.1039/c4nr00500g

Level of coding
minimal
Cataloging Standards
asu1
Note
This is the article as published at http://pubs.rsc.org.ezproxy1.lib.asu.edu/en/Content/ArticleLanding/2014/NR/c4nr00500g
System Created
  • 2014-06-26 05:20:50
System Modified
  • 2021-12-07 11:07:58
    •     
  • 1 year 3 months ago
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